In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements

Bernard Drevillon; Manijeh Razeghi

doi:10.1117/12.24320

1 March 1991 In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements

Bernard Drevillon, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24320
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Recent in situ applications of reflectance anisotropy (RA) to the study of the growth of 111-V materials by low pressure MOCVD are reviewed. These results illustrate the extreme sensitivity of the RA technique. During heterojunction growth the first 1-2 seconds are dominated by the change of group V species. Over the time scale of several minutes the signal exhibits damped oscillations correlated to the growth rate. An optical model is proposed to account for this behaviour. A difference in the optical anisotropy between growing and non-growing AsH3 stabilized InAs surface is observed. Large reflectance anisotropies during the growth of lattice-mismatched semiconductors are also presented. It is shown that these anisotropies are related to 3-dimensional growth. The beginning of the lattice-mismatched growth is quantitatively described by an optical model based on effective medium theories. More generally RA technique appears a very promising new method for in situ monitoring of epitaxial processes.

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Bernard Drevillon and Manijeh Razeghi "In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24320

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