Paper
1 June 1991 Novel acid-hardening positive photoresist technology
Karen A. Graziano, Stephen D. Thompson, Mark R. Winkle
Author Affiliations +
Abstract
A newly developed positive photoresist technology which produces a crosslinked image is described. This resist has demonstrated high sensitivity and resolution for e-beam and X-ray applications. The resist uses conventional novolak polymers and melamine crosslinking agents with thermal acid generators to achieve acid-catalyzed crosslinking in the unexposed areas of the resist. An amine base is photochemically generated in the exposed areas which inhibits the crosslinking reaction. The exposed area remains soluble in conventional aqueous base developers. Chemistry of the thermal acid generators as well as examples of the photobase generators is discussed. Lithographic results focus on e-beam and X-ray synchrotron applications in which the crosslinked positive image has high contrast and high resolution.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karen A. Graziano, Stephen D. Thompson, and Mark R. Winkle "Novel acid-hardening positive photoresist technology", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46360
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CITATIONS
Cited by 2 scholarly publications and 2 patents.
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KEYWORDS
X-rays

Diffusion

Photoresist technology

Deep ultraviolet

Polymers

Semiconducting wafers

X-ray lithography

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