New process for improving reverse characteristics of platinum silicide Schottky barrier power diodes

Shu-Lan Zhao; Yuan Jing Li; Jia Feng Yu; Ya-Li Yang; Shu Qin Liu; Ya Fu Fan; Xiu Yin Bao; Zheng Qing Li

doi:10.1117/12.47320

1 November 1991 New process for improving reverse characteristics of platinum silicide Schottky barrier power diodes

Shu-Lan Zhao, Yuan Jing Li, Jia Feng Yu, Ya-Li Yang, Shu Qin Liu, Ya Fu Fan, Xiu Yin Bao, Zheng Qing Li

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47320
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

This paper reports the use of a unique reactive ion etching (RIE) in Schottky barrier power diode manufacture. Reverse electrical characteristics of conventional Schottky barrier diodes are compared with those of the devices fabricated by RIE. It is shown that such devices give better reverse electrical characteristics eliminating the inherent edge effects of metal- semiconductor contacts. It is also shown that the device yield has been raised to 60%, which is much better than that of conventional Schottky diodes.

Citation Download Citation

Shu-Lan Zhao, Yuan Jing Li, Jia Feng Yu, Ya-Li Yang, Shu Qin Liu, Ya Fu Fan, Xiu Yin Bao, and Zheng Qing Li "New process for improving reverse characteristics of platinum silicide Schottky barrier power diodes", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47320

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