Paper
1 October 1991 New submillimeter-wave Schottky-barrier mixer diodes: first results
N. J. Keen
Author Affiliations +
Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157632 (1991) https://doi.org/10.1117/12.2297823
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Small area, low capacitance Schottky barrier diodes are currently available from only two suppliers in the world, and very considerable technological effort is required to obtain stable, low-noise operation when junction capacitances of 1 fF or less are required. Such diodes have been reported in the literature [1], and yield low noise and low conversion loss [2]. As a result of the increasing need for such diodes at frequencies above 500 GHz, and the possible need for tailoring specifications to particular space or radioastronomical requirements, a consortium of four German technical universities and a group of potential users combined to initiate fabrication and measurement of such diodes. This paper reports the first results.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. J. Keen "New submillimeter-wave Schottky-barrier mixer diodes: first results", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157632 (1 October 1991); https://doi.org/10.1117/12.2297823
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Cited by 10 scholarly publications.
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KEYWORDS
Diodes

Temperature metrology

Capacitance

Doping

Etching

Gallium arsenide

Manufacturing

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