Pattern generator specification for phase-shift 5X reticles

Jacques Trotel

doi:10.1117/12.56934

1 January 1992 Pattern generator specification for phase-shift 5X reticles

Jacques Trotel

Proceedings Volume 1604, 11th Annual BACUS Symposium on Photomask Technology; (1992) https://doi.org/10.1117/12.56934
Event: 11th Annual BACUS Symposium on Photomask Technology, 1991, Sunnyvale, CA, United States

Abstract

Phase shift masks are an opportunity for optical microlithography to face the challenge of submicron devices manufacturing for the next decade. The aim of the paper is to derive from the basic principles of phase shift mask operation, the tolerances requested from phase shift reticles in terms of minimum linewidth, critical dimensions (CD), overlay, writing grid. And to compare these tolerances to specifications of a particular type of Electron Beam Pattern Generator. The impact of CD variation and overlay of the 5X reticle on the Fourier Transform of the pattern are assessed semi quantitatively for simple significative patterns in order to give guidelines for pattern generator specifications.

Citation Download Citation

Jacques Trotel "Pattern generator specification for phase-shift 5X reticles", Proc. SPIE 1604, 11th Annual BACUS Symposium on Photomask Technology, (1 January 1992); https://doi.org/10.1117/12.56934

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