Plasma deposition of high-quality silicon dioxide

Tie-Han Wang

doi:10.1117/12.59822

1 June 1992 Plasma deposition of high-quality silicon dioxide

Tie-Han Wang

Proceedings Volume 1673, Integrated Circuit Metrology, Inspection, and Process Control VI; (1992) https://doi.org/10.1117/12.59822
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

This paper presents a new deposition system in PECVD. The reaction principle is described and the experimental results show the properties of deposition film are nearly those produced by thermal-grown SiO2. We had success using a passivation layer and diffusion barrier in the semiconductor device manufacturing process.

Citation Download Citation

Tie-Han Wang "Plasma deposition of high-quality silicon dioxide", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59822

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