Carrier injection into higher subbands by resonant tunneling in superlattices

Holger T. Grahn; Wolfgang W. Ruehle; Klaus H. Ploog

doi:10.1117/12.137612

3 September 1992 Carrier injection into higher subbands by resonant tunneling in superlattices

Holger T. Grahn, Wolfgang W. Ruehle, Klaus H. Ploog

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137612
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The injection of photoexcited carriers into higher subbands by resonant tunneling in GaAs- AlAs superlattices is directly observed by photoluminescence spectroscopy. For a conduction subband spacing larger than the longitudinal optical phonon energy, the relative occupation of the second subband is much smaller than one. However, if the conduction subband spacing is below the longitudinal optical phonon energy, the relative occupation increases, but so far no intersubband inversion has been detected.

Citation Download Citation

Holger T. Grahn, Wolfgang W. Ruehle, and Klaus H. Ploog "Carrier injection into higher subbands by resonant tunneling in superlattices", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137612

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