Paper
3 September 1992 Cavity-length dependence of quantum-well lasers with different strain
Ulf Ohlander, Dana Karlsson-Varga, Bjoern Broberg, Johan Wallin, Gunnar Landgren
Author Affiliations +
Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137606
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Previously, strain has shown to reduce the threshold current density for long cavity semiconductor lasers. However, also important is the cavity length for which the threshold current has a minimum. We find that for a given well width, an increase of the indium ratio from the lattice-matched value substantially reduces this optimum cavity length. We attribute this to the combined effects of strain on the valence bands and an increase in the confinement of the conduction band electrons to the well.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulf Ohlander, Dana Karlsson-Varga, Bjoern Broberg, Johan Wallin, and Gunnar Landgren "Cavity-length dependence of quantum-well lasers with different strain", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137606
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KEYWORDS
Quantum wells

Indium

Laser damage threshold

Absorption

Electrons

Physics

Semiconductor lasers

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