Exciton optical absorption in a diffusion-induced nonsquare AlGaAs/GaAs quantum well

E. Herbert Li; Bernard L. Weiss

doi:10.1117/12.137584

3 September 1992 Exciton optical absorption in a diffusion-induced nonsquare AlGaAs/GaAs quantum well

E. Herbert Li, Bernard L. Weiss

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137584
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The polarization dependent exciton ground state optical absorption in a diffusion induced AlGaAs/GaAs undoped non-square single quantum well has been calculated. The exciton Hamiltonian is expressed in the effective mass approximation using a separable enveloped function to determine both the electron and hole subbands and the 1S-like hydrogenic wavefunction for the coulombic interaction. The k(DOT)p approach is used, assuming a parabolic band without mixing, to obtain the dipole matrix elements, which are then used to determine the TE and TM absorption coefficients.

Citation Download Citation

E. Herbert Li and Bernard L. Weiss "Exciton optical absorption in a diffusion-induced nonsquare AlGaAs/GaAs quantum well", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137584

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