Novel GaAs/AlAs tunnel structures as microwave detectors

Richard T. Syme; Michael Joseph Kelly; Mike Robinson; R. S. Smith; Ian Dale

doi:10.1117/12.137622

3 September 1992 Novel GaAs/AlAs tunnel structures as microwave detectors

Richard T. Syme, Michael Joseph Kelly, Mike Robinson, R. S. Smith, Ian Dale

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137622
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We have designed (using a specially developed simulation package) some novel GaAs/AlAs tunnel structures with highly asymmetric current-voltage (I-V) characteristics for use as microwave detectors. The asymmetry arises from having unequal spacer regions either side of a single AlAs tunnel barrier. Recent designs have a microwave performance at 9.4 GHz which matches a zero-bias Schottky diode in terms of voltage sensitivity and dynamic range, but with a much better (equals weaker) temperature dependence. The new diodes also out-perform existing germanium back diodes in their voltage sensitivity and dynamic range, although the variation of sensitivity with temperature is not quite as small; it is expected however that this gap can be closed. The main competition for the new diodes is expected to come from the recently developed planar-doped-barrier detector (PDB) diodes, which combine the high sensitivity and dynamic range of the Schottky diode with a somewhat weaker variation with temperature. However, our diodes are still expected to have a weaker temperature dependence, and they would seem to be more easily and cheaply manufactured due to the problems associated with control over the p+ doping spike in a PDB diode: we have successfully made structures by both MBE and MOCVD. In this paper, we describe the design of our diodes and demonstrate the above points with detailed graphs of d.c. and microwave performance for one MBE-grown structure and one MOCVD-grown structure.

Citation Download Citation

Richard T. Syme, Michael Joseph Kelly, Mike Robinson, R. S. Smith, and Ian Dale "Novel GaAs/AlAs tunnel structures as microwave detectors", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137622

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available