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A new method of film structure monitoring is proposed. It is based on the analysis of second harmonic (SH) radiation induced in a film irradiated by a laser beam. SH intensity measurement versus angle of the plane of polarization of the incident light and versus film thickness provides the information about film crystal quality, presence of polycrystalline component and crystallographic axes orientation. This method can be complementary to the well-known ones and is especially suitable for research groups since it allows a correlation between technological and crystallographic parameters to be quickly determined.
Victor F. Krasnov,Semion L. Musher,V. I. Prots,Alexander M. Rubenchik,Vladimir E. Ryabchenko, andMikhail F. Stupak
"Nonlinear optical diagnostics of a crystalline film in molecular-beam-epitaxy devices", Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); https://doi.org/10.1117/12.58644
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Victor F. Krasnov, Semion L. Musher, V. I. Prots, Alexander M. Rubenchik, Vladimir E. Ryabchenko, Mikhail F. Stupak, "Nonlinear optical diagnostics of a crystalline film in molecular-beam-epitaxy devices," Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); https://doi.org/10.1117/12.58644