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21 May 1993 Smart-power metallization: issues, challenges, and opportunities (Abstract Only)
Krishna Shenai
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Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145458
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Smart-power technologies that provide on-chip integration of power and signal devices offer a unique challenge in process integration. Metallization plays a pivotal role as it critically impacts the performance and reliability of both the signal and power devices. This talk will address the most critical issues pertaining to device performance/reliability and process integration of smart-power technologies based on the experimental data obtained from a variety of metallization systems including TiSi2, LPCVD tungsten, and LPCVD WSi2. The talk will identify the important challenges and opportunities for further work in this technologically vital area.
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Krishna Shenai "Smart-power metallization: issues, challenges, and opportunities (Abstract Only)", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145458
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KEYWORDS
Low pressure chemical vapor deposition
Signal processing
Reliability
Tungsten
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