Paper
28 June 1993 Spectrally-narrow nonlinear resonances in semiconductor-doped glasses
Author Affiliations +
Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147956
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus
Abstract
For the first time we report spectral hole-burning with the width as small as (Gamma) equals 10 meV for semiconductor quantum dots of the size much smaller than the excitonic Bohr radius of the bulk material. The narrow nonlinear resonances found are typical of the structures prepared at the nucleation and normal growth precipitation stages. The saturation intensity on the order of <EQ 102 kW/cm2 registered for high-quality CdSe-doped glass is close to that for excitonic nonlinearity of CdSe monocrystalline films. The structures grown at the coalescence stage show only broad-band nonlinear absorption with a saturation intensity much higher than the proper bulk material.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang W. Langbein, Ulrike Woggon, Sergey V. Gaponenko, Aiga Uhrig, and Claus F. Klingshirn "Spectrally-narrow nonlinear resonances in semiconductor-doped glasses", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147956
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Absorption

Quantum dots

Glasses

Crystals

Hole burning spectroscopy

Semiconductors

Nonlinear crystals

Back to Top