Paper
23 October 1992 Analysis of electrical properties of delta-doped layers
T. M. Cheng, Ming Shiann Feng, Huey Liang Hwang
Author Affiliations +
Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131247
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
A numerical program which solves Poisson equation and Schrodinger equation self- consistently was developed. Many structures of the delta-doped layers structures had been simulated including different dopant concentrations, different length scales of dopant confinement, and delta doping in quantum well structures. A quantum mechanical model of C- V profile was adopted to derive the 'apparent C-V profile' of the delta-doped layer and which is compared with the dopant distribution and free carrier distribution. The electron concentration saturation, enhanced electron mobility, and the condition for minimum FWHM (full width at half maximum) of electron distribution can be successfully explained with the results from our study. The analyses are consistent with the experiment results of other groups. This could provide a tool for the delta-doped quantum well HEMT.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. M. Cheng, Ming Shiann Feng, and Huey Liang Hwang "Analysis of electrical properties of delta-doped layers", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131247
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KEYWORDS
Doping

Quantum wells

Field effect transistors

Gallium arsenide

Ions

Optoelectronic devices

Satellites

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