High-temperature InGaAs strained-quantum-well lasers (Invited Paper)

Chi-Shain Hong

doi:10.1117/12.131227

23 October 1992 High-temperature InGaAs strained-quantum-well lasers (Invited Paper)

Chi-Shain Hong

Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131227
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

Ridge-waveguide InGaAs/GaAs strained quantum-well lasers with high temperature (225 degree(s)C), high power (350 mW), and high reliability characteristics have been successfully demonstrated. The paper reviews recent progress in the laser design and performance with respect to temperature, power, and reliability for fiber-optic amplifier and avionics applications.

Citation Download Citation

Chi-Shain Hong "High-temperature InGaAs strained-quantum-well lasers (Invited Paper)", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131227

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