Low-temperature-processed poly-Si TFT using solid-phase-crystallization and liquid-phase-deposition gate oxide

Ching-Fa Yeh; Yu-Chi Yang; Tzung-Zu Yang; Chun-Lin Chen; Tai Chiung Hsieh

doi:10.1117/12.131309

27 October 1992 Low-temperature-processed poly-Si TFT using solid-phase-crystallization and liquid-phase-deposition gate oxide

Ching-Fa Yeh, Yu-Chi Yang, Tzung-Zu Yang, Chun-Lin Chen, Tai Chiung Hsieh

Author Affiliations +

Proceedings Volume 1815, Display Technologies; (1992) https://doi.org/10.1117/12.131309
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

Polysilicon thin-film transistors (TFTs) using solid phase crystallization (SPC) and liquid- phase deposition (LPD) gate oxide are first realized by low-temperature processes (< 600 degree(s)C). Raman spectra of poly-Si layer reveals that LPCVD a-Si layer following with Si⁺ implantation and SPC at 600 degree(s)C for 48 hours is a superior starting material for active layer. The method of LPD-SiO₂ is described. The physical, chemical and electrical properties of such a new dielectric layer are clarified. The TFTs exhibit sufficient performance for pixel transistors. The field effect mobility reveals much dependence on channel length. The off-state current comprise the resistive current, the thermal emission current and the field enhanced generation current via trap states.

Citation Download Citation

Ching-Fa Yeh, Yu-Chi Yang, Tzung-Zu Yang, Chun-Lin Chen, and Tai Chiung Hsieh "Low-temperature-processed poly-Si TFT using solid-phase-crystallization and liquid-phase-deposition gate oxide", Proc. SPIE 1815, Display Technologies, (27 October 1992); https://doi.org/10.1117/12.131309

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