Femtosecond optical rectification from semiconductor surfaces and quantum wells

Shun-Lien Chuang

doi:10.1117/12.147051

17 June 1993 Femtosecond optical rectification from semiconductor surfaces and quantum wells

Shun-Lien Chuang

Proceedings Volume 1861, Ultrafast Pulse Generation and Spectroscopy; (1993) https://doi.org/10.1117/12.147051
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

A theoretical model based on the nonlinear optical rectification at semiconductor surfaces and quantum wells is reviewed. The theory explains the experimental observations including the crystal orientation dependence of the terahertz signal on the crystal growth axis. Interesting properties, such as (1) the polarization of the radiated electromagnetic pulse is mostly in the plane of incidence (TM polarization), (2) the polarity of the radiation field changes in sign from an n-type doped sample to a p-type doped sample, (3) the radiated field decreases with increasing temperature, (4) the radiation field decreases with increasing doping concentration, and (5) the frequency response of the radiation field peaks near the terahertz range, can all be explained using the optical rectification theory. We also discuss how the same theory can explain the experimentally observed terahertz signals from coupled quantum-well structures. The theory shows that both optically rectified signals and quantum beats are generated.

Citation Download Citation

Shun-Lien Chuang "Femtosecond optical rectification from semiconductor surfaces and quantum wells", Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); https://doi.org/10.1117/12.147051

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