Electron beam hardening of photo resist

William R. Livesay; Anthony L. Rubiales; Matthew F. Ross; Scott C. Woods; S. Campbell

doi:10.1117/12.154778

15 September 1993 Electron beam hardening of photo resist

William R. Livesay, Anthony L. Rubiales, Matthew F. Ross, Scott C. Woods, S. Campbell

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154778
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Electron beam hardening is investigated and compared with conventional thermal hardening on a diazoquinone novolac (DQN) photoresist. The electron beam hardening is accomplished without significant heating of the resist thereby eliminating resist flow or melting. The electron beam cured polymer is fully cross-linked throughout its entire thickness (full matrix cure). Thermal stability of the resist versus electron beam dose is examined. The results of varying amounts of electron beam dose show that the shrinkage of the photoresist can be reduced almost to zero by sufficient curing. The elimination of shrinkage of the resist also greatly reduces the amount of stress in the cured film. After this electron beam cure, no resist stress or shrinkage is experienced even when the resist is subjected to thermal bakes in excess of 200 degree(s)C. In fact, thermal stability of better than 400 degree(s)C has been demonstrated. The resist shrinkage is eliminated due to the resist being fully cross-linked well below its glass transition temperature. These fully cross-linked resists exhibit superior performance in plasma processing and yet remain strippable by conventional plasma ashing processes.

Citation Download Citation

William R. Livesay, Anthony L. Rubiales, Matthew F. Ross, Scott C. Woods, and S. Campbell "Electron beam hardening of photo resist", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154778

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