Paper
4 August 1993 Study for measurement accuracy of the spectroscopic thin film thickness measurement system
Nobuyuki Kondo, Nariaki Fujiwara, Atsushi Abematsu
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Abstract
The spectroscopic film thickness measurement system is generally composed of a microscope, a spectrometer, and a data processing unit, and it enables non-contact measurement of transparent films (such as SiO2) on semiconductor substrate with a minute spot objective of some micron meter in diameter. Its measurement principle is based on the interference effect of multiply reflected lights from film and substrate surfaces, and the measurement result is obtained by analyzing the spectral profile of the reflected lights separated by the spectrometer. The measurement accuracy depends on many factors. The accuracy has been already often discussed, however, few reports have referred in detail to the relation between the measurement accuracy and NA characteristic of objective. This report will deal with this NA-relating issue. This paper explains: (1) the factors that have an influence on the accuracy of the spectroscopic film thickness measurement, (2) influence by the NA characteristic of objective, (3) our spectroscopic film thickness measurement system, and (4) summary.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobuyuki Kondo, Nariaki Fujiwara, and Atsushi Abematsu "Study for measurement accuracy of the spectroscopic thin film thickness measurement system", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.148992
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Spectroscopy

Reflection

Reflectivity

Microscopes

Objectives

Absorption

Silicon

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