Phase-shift reticles for the fabrication of subhalf micron gates in GaAs integrated circuits using optical stepper lithography

Joachim Schneider; Fred Becker; Brian Raynor; Birgit Weismann

doi:10.1117/12.150458

8 August 1993 Phase-shift reticles for the fabrication of subhalf-micron gates in GaAs integrated circuits using optical stepper lithography

Joachim Schneider, Fred Becker, Brian Raynor, Birgit Weismann

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Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150458
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Phase shifting mask techniques using an i-line wafer stepper (ASML PAS 2500/40) were applied to our recessed gate process for the fabrication of GaAs/AlGaAs high electron mobility transistors (HEMT). Several methods for making reticles with contrast enhanced shifters, such as an extra patterned resist layer on top of the chromium reticle are presented. This paper gives a short review of the different phase shift processes and layer geometries and the advantages and disadvantages depending on application are discussed.

Citation Download Citation

Joachim Schneider, Fred Becker, Brian Raynor, and Birgit Weismann "Phase-shift reticles for the fabrication of subhalf-micron gates in GaAs integrated circuits using optical stepper lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150458

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