Fabrication and characterization of ZnSe-based blue/green laser diodes

Ayumu Tsujimura; Shigeo Yoshii; Shigeo Hayashi; Kazuhiro Ohkawa; Tsuneo Mitsuyu

doi:10.1117/12.162806

19 November 1993 Fabrication and characterization of ZnSe-based blue/green laser diodes

Ayumu Tsujimura, Shigeo Yoshii, Shigeo Hayashi, Kazuhiro Ohkawa, Tsuneo Mitsuyu

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162806
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single- quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm^-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm²micrometers ) and a gain factor of 0.095 cmmicrometers /A were obtained. The optical gain is improved by lowering the dislocation density in the laser structure.

Citation Download Citation

Ayumu Tsujimura, Shigeo Yoshii, Shigeo Hayashi, Kazuhiro Ohkawa, and Tsuneo Mitsuyu "Fabrication and characterization of ZnSe-based blue/green laser diodes", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162806

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