In-situ structured MBE-grown crystals for applications in optoelectronics

Karlheinz H. Gulden; Michael Kneissl; Peter Kiesel; A. Hoefler; S. Malzer; Gottfried H. Doehler; X. X. Wu; John Stephen Smith

doi:10.1117/12.162748

19 November 1993 In-situ structured MBE-grown crystals for applications in optoelectronics

Karlheinz H. Gulden, Michael Kneissl, Peter Kiesel, A. Hoefler, S. Malzer, Gottfried H. Doehler, X. X. Wu, John Stephen Smith

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162748
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

We present the shadow mask molecular beam epitaxial (MBE) growth technique which allows an in situ lateral structuring of the doping profile and the growth rate on a micrometers scale. The electrical dc characteristics show that excellent quality selective contacts have been achieved on devices with lateral dimensions down to the micrometers range. The leakage currents are, even for highly doped structures, in the nA range. High reflectivity Bragg mirrors and pronounced exciton peaks observed on MQW structures confirm the high quality of the regrown material. The influence of the aspect ratio on the growth rates is very small. We have applied this novel technique to fabricate various selectively contacted optoelectronic devices based on n-i-p-i doping superlattices. For GaAs Franz Keldysh n-i-p-i modulators with selective contacts an on/off ratio of 6:1 has been achieved. High frequency results obtained on medium size devices indicate that 3 dB frequencies in the GHz range should be possible for n-i-p-i devices with dimensions < 4 micrometers fabricated with this technique. By selectively contacting the QWs in a modulation doped hetero n-i-p-i structure constructive superposition of field and carrier induced absorption changes have been achieved.

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Karlheinz H. Gulden, Michael Kneissl, Peter Kiesel, A. Hoefler, S. Malzer, Gottfried H. Doehler, X. X. Wu, and John Stephen Smith "In-situ structured MBE-grown crystals for applications in optoelectronics", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162748

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