Implications of carrier mobility limitations for GaAs as an x-ray detector

S. M. Grant; Timothy J. Sumner; J. P. Warren; D. Alexiev; K. S. A. Butcher

doi:10.1117/12.162849

19 November 1993 Implications of carrier mobility limitations for GaAs as an x-ray detector

S. M. Grant, Timothy J. Sumner, J. P. Warren, D. Alexiev, K. S. A. Butcher

Author Affiliations +

Proceedings Volume 2006, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV; (1993) https://doi.org/10.1117/12.162849
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

Theoretically, gallium arsenide detectors offer an attractive alternative to silicon for the high energy x-ray astronomer, due to the greater absorption power of the material. However, in practice, GaAs detectors made from bulk-grown crystals have a spectral resolution which falls well short of both expectation and that achieved by silicon detectors of comparable thickness. In contrast, a detector fabricated from GaAs grown by the liquid phase epitaxial (LPE) process displays full charge collection with a resolution in agreement with that expected from measurements of leakage current and device capacitance. Experimental results are presented showing the level of spectral resolution possible in a variety of GaAs detectors, including Liquid Enhancement Czochralski material from various manufacturers, Vertical Bridgeman and LPE material. Both the detector performance and the electrical characteristics (voltage- current, noise, etc) have been explored for each device.

Citation Download Citation

S. M. Grant, Timothy J. Sumner, J. P. Warren, D. Alexiev, and K. S. A. Butcher "Implications of carrier mobility limitations for GaAs as an x-ray detector", Proc. SPIE 2006, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV, (19 November 1993); https://doi.org/10.1117/12.162849

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KEYWORDS

Sensors

Gallium arsenide

Liquid phase epitaxy

Diodes

X-ray detectors

Capacitance

Amplifiers

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