High-power semiconductor lasers for lidar and sensing applications

Mark C. Farries; Andrew C. Carter; T. J. Reid

doi:10.1117/12.168078

1 February 1993 High-power semiconductor lasers for lidar and sensing applications

Mark C. Farries, Andrew C. Carter, T. J. Reid

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Proceedings Volume 2088, Laser Dimensional Metrology: Recent Advances for Industrial Application; (1993) https://doi.org/10.1117/12.168078
Event: Laser Dimensional Metrology: Recent Advances for Industrial Application, 1993, Brighton, United Kingdom

Abstract

Recent advances in semiconductor laser technology, which have led to compact sources potentially suitable for lidar, are described. Quantum well technology has enabled InGaAs laser arrays to provide powers of 800 mW in the 900 - 1000 nm wavelength region while InGaAsP lasers provide peak powers of 1.4 W at the eye safe wavelength of 1.55 micrometers . A distributed feedback structure has been used to simultaneously produce a mean power of 100 mW and a linewidth of 800 kHz which may be used for coherent lidar (e.g., FM cw).

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Mark C. Farries, Andrew C. Carter, and T. J. Reid "High-power semiconductor lasers for lidar and sensing applications", Proc. SPIE 2088, Laser Dimensional Metrology: Recent Advances for Industrial Application, (1 February 1993); https://doi.org/10.1117/12.168078

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