Third order nonlinearities in semiconductors at FIR wavelengths

P. G. Huggard

doi:10.1117/12.2298553

30 August 1993 Third order nonlinearities in semiconductors at FIR wavelengths

P. G. Huggard

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21043D (1993) https://doi.org/10.1117/12.2298553
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

The power dependence of third harmonic generation from p-Si at an incident frequency of 40 cm-1 has been investigated,using an alternative design of waveguide high pass filter. Significant deviations from the expected cube dependence ofharmonic energy on incident energy were observed. at 300 K and 4.2 K.

Citation Download Citation

P. G. Huggard "Third order nonlinearities in semiconductors at FIR wavelengths", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21043D (30 August 1993); https://doi.org/10.1117/12.2298553

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