High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Eric D. Grann; Shou Jong Sheih; C. Chia; Kong-Thon F. Tsen; Otto F. Sankey; George N. Maracas; R. Droopad; Arnel A. Salvador; Andrei Botchkarev; Hadis Morkoc

doi:10.1117/12.175890

6 May 1994 High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Eric D. Grann, Shou Jong Sheih, C. Chia, Kong-Thon F. Tsen, Otto F. Sankey, George N. Maracas, R. Droopad, Arnel A. Salvador, Andrei Botchkarev, Hadis Morkoc

Author Affiliations +

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175890
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T approximately equals 80 K. For an injected carrier density of n approximately equals 2.2 X 10¹⁸ cm^-3 and electric field intensity E equals 25 KV/cm, the drift velocity of electrons as high as V_d equals 2.5 X 10⁷ cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

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Eric D. Grann, Shou Jong Sheih, C. Chia, Kong-Thon F. Tsen, Otto F. Sankey, George N. Maracas, R. Droopad, Arnel A. Salvador, Andrei Botchkarev, and Hadis Morkoc "High-field electron transport in GaAs: a picosecond time-resolved Raman probe", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175890

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