Enhanced precision CD measurements via topographic modeling

Alexander Henstra; James J. Jackman

doi:10.1117/12.174168

1 May 1994 Enhanced precision CD measurements via topographic modeling

Alexander Henstra, James J. Jackman

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174168
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

To evaluate the rigorousness of existing algorithms for critical dimension (CD) linewidth measurements in the SEM, a Monte Carlo program was developed to model the topographic signal of line-and-space patterns for both backscattered and secondary electrons. The line cross-section is assumed to be a perfect trapezoid. In this paper we present the results of the modeling of submicron photoresist lines on a silicon substrate for primary beam energies <EQ 1 keV and for various slope angles, pitches, and beam sizes. The simulated profiles are used to quantify the systematic errors introduced by commonly used linewidth measuring algorithms. The simulated secondary electron profiles are compared with reality by recording top-view and cross-section SEM images of submicron resist lines on Si. For comparison reasons only, we also recorded the same images after gold-coating the specimen, thus eliminating charging effects. The experimental profiles are very similar to the simulated profiles, but the geometrical imperfectness of the resist lines inhibits a quantitative comparison.

Citation Download Citation

Alexander Henstra and James J. Jackman "Enhanced precision CD measurements via topographic modeling", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174168

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