Feature Size Variation Of Electron Beam Exposure System (EBES) Master Masks

M. J. Cowan; R. F. Helm

doi:10.1117/12.958631

5 September 1980 Feature Size Variation Of Electron Beam Exposure System (EBES) Master Masks

M. J. Cowan, R. F. Helm

Proceedings Volume 0221, Developments in Semiconductor Microlithography V; (1980) https://doi.org/10.1117/12.958631
Event: Semiconductor Microlithography V, 1980, San Jose, United States

Abstract

The electron beam exposure system, called EBES, has been used since 1974 to produce 1:1 chromium master masks for integrated circuits. The I.C design rules for VLSI require mask specifications approaching the limit of technology. Data is presented showing the variation of feature size on both macroscopic and microscopic scales. The parameters which impact upon the observed intra-die, inter-die and inter-mask dispersions are discussed. The presentation is slanted toward characteristics important to VLSI, both to serve as a guide to designers and to define those areas which most severely limit achievement of better feature size control.

Citation Download Citation

M. J. Cowan and R. F. Helm "Feature Size Variation Of Electron Beam Exposure System (EBES) Master Masks", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958631

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