Improved conductivity measurement of semiconductor epitaxial layers by means of the contactless microwave method

P. Boege; H. Schaefer; Shan-jia Xu; Xinzhang Wu; S. Einfeldt; Charles R. Becker; D. Hommel; Reinhart Geick

doi:10.1117/12.183059

19 August 1994 Improved conductivity measurement of semiconductor epitaxial layers by means of the contactless microwave method

P. Boege, H. Schaefer, Shan-jia Xu, Xinzhang Wu, S. Einfeldt, Charles R. Becker, D. Hommel, Reinhart Geick

Author Affiliations +

Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183059
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.

Citation Download Citation

P. Boege, H. Schaefer, Shan-jia Xu, Xinzhang Wu, S. Einfeldt, Charles R. Becker, D. Hommel, and Reinhart Geick "Improved conductivity measurement of semiconductor epitaxial layers by means of the contactless microwave method", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.183059

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