V-band monolithic pseudomorphic high-electron-mobility transistor (HEMT) MMIC phased array components

Guey-Liu Lan; Cheng K. Pao; Chan-Shin Wu; Ming Hu; Alan N. Downey

doi:10.1117/12.182991

19 August 1994 V-band monolithic pseudomorphic high-electron-mobility transistor (HEMT) MMIC phased array components

Guey-Liu Lan, Cheng K. Pao, Chan-Shin Wu, Ming Hu, Alan N. Downey

Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.182991
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Recent advances in pseudomorphic HEMT (PHEMT) MMIC technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper will describe the development of V-band PHEMT MMIC components including power amplifiers and phase shifters. For the single-stage MMIC power amplifier employing a 200 micrometers PHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 26.4% power-added efficiency at 60 GHz. A three-stage MMIC amplifier utilizing the same devices demonstrated 80 mW output power, 20.5% power-added efficiency, and 17 dB associated gain at 57 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 GHz has been achieved.

Citation Download Citation

Guey-Liu Lan, Cheng K. Pao, Chan-Shin Wu, Ming Hu, and Alan N. Downey "V-band monolithic pseudomorphic high-electron-mobility transistor (HEMT) MMIC phased array components", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.182991

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