Pulsed anodization technique for fabricating GaSb-based lasers

Craig C. Largent; Michael J. Grove; Peter S. Zory; Hong K. Choi; George W. Turner

doi:10.1117/12.208453

28 April 1995 Pulsed anodization technique for fabricating GaSb-based lasers

Craig C. Largent, Michael J. Grove, Peter S. Zory, Hong K. Choi, George W. Turner

Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208453
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Recent advances in GaSb-based crystal growth technology have led to the demonstration of high performance quantum well lasers which emit at mid-infrared wavelengths. In fabricating such lasers, techniques are utilized which are processing intensive and time consuming. In this work, we report on the use of a pulsed anodic oxidation (anodization) technique to fabricate low-ridge, wide-stripe GaInAsSb/AlGaAsSb lasers operating near 2 micrometers . The low-ridge stripe areas are defined in one, 5-minute processing step which converts the p⁺ layer outside the stripe area into a uniform, stable native oxide.

Citation Download Citation

Craig C. Largent, Michael J. Grove, Peter S. Zory, Hong K. Choi, and George W. Turner "Pulsed anodization technique for fabricating GaSb-based lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208453

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