Paper
9 June 1995 Effect of reducing the contaminant concentration when patterning a chemically amplified positive resist
Akira Oikawa, Yasunori Hatakenaka, Yumiko Ikeda, Yoko Kokubo, Motoko Tanishima, Nobuaki Santoh, Naomichi Abe
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Abstract
We considered that contaminant control could best be addressed from the processing side. A KrF excimer stepper and a track system were physically integrated and equipped with chemical filter units. The atmosphere where wafers were transported from exposure to postexposure bake (PEB) was enclosed. The measured ammonia concentration was always less than 0.5 (mu) g/m3 everywhere within the enclosed atmosphere. We patterned resists with an ammonia concentration of 0.2 (mu) g/m3. They showed no T-tops and the deviation rates of line width against PEB were within the range of 0.56 to 0.80 nm/min for line and space patterns between 0.30 to 0.35 micrometers . These low deviation rates were considered to be acceptable for manufacturing purposes.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Oikawa, Yasunori Hatakenaka, Yumiko Ikeda, Yoko Kokubo, Motoko Tanishima, Nobuaki Santoh, and Naomichi Abe "Effect of reducing the contaminant concentration when patterning a chemically amplified positive resist", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210383
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KEYWORDS
Semiconducting wafers

Optical lithography

Contamination

Atmospheric physics

Coating

Contamination control

Excimers

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