Advanced mask fabrication system

Tadahiro Takigawa; Toru Tojo; Yoji Ogawa; Kiyomi Koyama; Akira Ono; Soichi Inoue; Shinichi Ito; Mineo Goto

doi:10.1117/12.212798

3 July 1995 Development of an advanced mask and its fabrication system

Tadahiro Takigawa, Toru Tojo, Yoji Ogawa, Kiyomi Koyama, Akira Ono, Soichi Inoue, Shinichi Ito, Mineo Goto

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212798
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

Masks and their fabrication technologies are keys to the further advancement of optical lithography. A stable SiNx single layer attenuated masks for DUV have been developed. A 0.2 micrometers contact hole pattern was fabricated using a KrF stepper with the SiNx attenuated mask. Toshiba mask fabrication system, including an electron beam writing system, a data base inspection system, and a data conversion system, has been developed for 64 Mbit DRAM class. Required mask improvements for increasing optical lithography resolution include better critical dimension (CD) uniformity, higher mask writing system resolution, and automatic shifter patten generation of alternating phase shifting masks. In addition, improved mask pattern positioning accuracy is also required. In this paper, experimental CD uniformity and resolution improvements, automatic phase shifter assignment method, and improvement in positioning accuracy, are described. The future development of masks will incorporate these key technologies.

Citation Download Citation

Tadahiro Takigawa, Toru Tojo, Yoji Ogawa, Kiyomi Koyama, Akira Ono, Soichi Inoue, Shinichi Ito, and Mineo Goto "Development of an advanced mask and its fabrication system", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212798

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