Charge spectroscopy of localized states in thin film heterostructures

Sergey L. Vinogradov

doi:10.1117/12.218177

1 September 1995 Charge spectroscopy of localized states in thin film heterostructures

Sergey L. Vinogradov

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218177
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The concept of integrated technique of thermally activated spectroscopy (TAS) of localized states (LS) in forbidden gap of semiconductors and insulators (intrinsic and impurity centers of trapping, recombination, luminescence) taking into account the interactions of the charge delocalization and transport processes in heterostructures is developed. In the widely used advanced TAS techniques (deep level transient spectroscopy -- DLTS, fractional thermally stimulated depolarization -- FTSD) the interaction of thermogeneration and trapping with transport and spatial redistribution of charge carriers (i.e., the relationship of transitions on to energetic and spatial coordinates) are considered as negligible, that results in incorrect applications of these techniques for such interesting objects as amorphous and disordered materials, thin films, and heterostructures. As shown by numerical simulations and experiments, the charge TAS realizes the high threshold sensitivity, high stability to anomalous effects of spatial charge redistribution, and may be used on all stages of relaxation process with arbitrary kinetic parameters.

Citation Download Citation

Sergey L. Vinogradov "Charge spectroscopy of localized states in thin film heterostructures", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218177

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