Molecular beam epitaxial growth and optical properties of (001) HgTe/Hg1-xCdxTe superlattices

Charles R. Becker; V. Latussek; Wolfgang Spahn; F. Goschenhofer; S. Oehling; Gottfried Landwehr

doi:10.1117/12.218176

1 September 1995 Molecular beam epitaxial growth and optical properties of (001) HgTe/Hg_1-xCd_xTe superlattices

Charles R. Becker, V. Latussek, Wolfgang Spahn, F. Goschenhofer, S. Oehling, Gottfried Landwehr

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218176
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The experimental optical absorption coefficient of HgTe/Hg_0.32Cd_0.68Te superlattices with a wide range of well and barrier widths have been compared with theoretical calculations. There is good agreement with experiment if the Cd concentration profile across the as-grown interfaces is assumed to have the shape given by an error function together with an additional Cd concentration of 3% in the quantum wells. The latter concentration was experimentally confirmed. If diffusion is responsible for this concentration profile then a dependence on depth should be present, however, none was observed. Therefore the Cd concentration profile across the interfaces of an as-grown HgTe/Hg_0.32Cd_0.68Te superlattice does not result from interdiffusion of the interfaces during growth. In other words, growth mechanisms do not involve interdiffusion of the interfaces.

Citation Download Citation

Charles R. Becker, V. Latussek, Wolfgang Spahn, F. Goschenhofer, S. Oehling, and Gottfried Landwehr "Molecular beam epitaxial growth and optical properties of (001) HgTe/Hg_1-xCd_xTe superlattices", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218176

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