Improvement of the high-frequency performance of field effect transistors via employing a novel high-temperature electronic technique

Rajendra Narasimhan; Robert P. Rozario; Laurence P. Sadwick; R. Jennifer Hwu-Sadwick

doi:10.1117/12.224221

13 October 1995 Improvement of the high-frequency performance of field effect transistors via employing a novel high-temperature electronic technique

Rajendra Narasimhan, Robert P. Rozario, Laurence P. Sadwick, R. Jennifer Hwu-Sadwick

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Proceedings Volume 2558, Millimeter and Submillimeter Waves II; (1995) https://doi.org/10.1117/12.224221
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

This paper reports the effects of elevated temperatures on high-frequency/high-speed devices, particularly GaAs metal semiconductor field effect transistors (MESFETs) and high-electron mobility transistors (HEMTs). A novel high-temperature electronic technique (HTET) that was employed to stabilize the performance of these devices at high temperatures will also be discussed. The HTET substantially reduced the leakage currents in the substrate, improved the output resistance and breakdown voltage. The HTET also aids in obtaining comparable gain, at elevated temperatures, to the gain obtained at room temperature. The high temperature effects on high-frequency/high-speed FETs and HTET have also been simulated using LIBRA. The simulation results show strong correlation with the experimental data.

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Rajendra Narasimhan, Robert P. Rozario, Laurence P. Sadwick, and R. Jennifer Hwu-Sadwick "Improvement of the high-frequency performance of field effect transistors via employing a novel high-temperature electronic technique", Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995); https://doi.org/10.1117/12.224221

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KEYWORDS

Field effect transistors

Resistance

Temperature metrology

Metals

Diodes

Transistors

Capacitance

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