Paper
1 April 1996 Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
O. Kjebon, Richard Schatz, Sebastian Lourdudoss, Stefan Nilsson, Bjoern Stalnacke
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Abstract
Results from modulation measurements of 40 high-speed multi quantum well (MQW) lasers ((lambda) equals 1.55 micrometer) of various designs are presented. By fitting the careful calibrated measurements, both magnitude and phase, to an analytical transfer function we were able to determine if a certain laser was limited by thermal effects, parasitic-like effects, or nonlinear gain effects. We found that most of the devices in the study were limited by thermal effects and/or contact parasitics. The parasitics were found to be determined by the width of the high-doped contact layer and cladding layers below the metallic contact. It was also found that a high doping of the separate confinement heterostructure (SCH) layers decreases the damping of the relaxation peak since it facilitates the carrier transport. Improved contact design and high doped SCH-layers resulted in modulation bandwidths of around 24 GHz.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. Kjebon, Richard Schatz, Sebastian Lourdudoss, Stefan Nilsson, and Bjoern Stalnacke "Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); https://doi.org/10.1117/12.236941
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Cited by 39 scholarly publications.
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KEYWORDS
Modulation

Calibration

Sensors

Doping

Thermal effects

Quantum wells

Diffusion

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