Absorption and refractive nonlinearity in heavily doped A3B5 semiconductors below the fundamental absorption edge

Ilya A. Utkin; Fedor V. Karpushko; V. L. Malevich; George V. Sinitsyn

doi:10.1117/12.239762

6 May 1996 Absorption and refractive nonlinearity in heavily doped A³B⁵ semiconductors below the fundamental absorption edge

Ilya A. Utkin, Fedor V. Karpushko, V. L. Malevich, George V. Sinitsyn

Author Affiliations +

Proceedings Volume 2796, ICONO '95: Fundamentals of Laser-Matter Interaction; (1996) https://doi.org/10.1117/12.239762
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation

Abstract

Nonlinear optical absorption in heavily doped n-GaAs and n-InP has been studied experimentally in a nanosecond time scale. Theoretical description of the nonlinear absorption is given that takes into account band-filling, band-gap renormalization and Coulomb screening effects. The results of experimental investigation of self-diffraction effect observed in these semiconductors are presented.

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Ilya A. Utkin, Fedor V. Karpushko, V. L. Malevich, and George V. Sinitsyn "Absorption and refractive nonlinearity in heavily doped A³B⁵ semiconductors below the fundamental absorption edge", Proc. SPIE 2796, ICONO '95: Fundamentals of Laser-Matter Interaction, (6 May 1996); https://doi.org/10.1117/12.239762

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