Paper
18 December 1996 Far-infrared lasing due to intracenter optical transitions in Ge
Igor V. Altukhov, Elena G. Chirkova, Miron S. Kagan, Konstantin A. Korolev, Valery P. Sinis
Author Affiliations +
Abstract
Stimulated emission of far-IR radiation from uniaxially compressed p-Ge in strong electric fields is shown to be due to population inversion of strain split acceptor levels. The peak corresponding to the optical transitions between split- off and ground acceptor states is found in the spectrum of stimulated emission. The strong frequency tuning by stress due to pressure dependence of the energy splitting of these states is obtained. The inversion takes place as the split- off acceptor state is in the valence band continuum.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor V. Altukhov, Elena G. Chirkova, Miron S. Kagan, Konstantin A. Korolev, and Valery P. Sinis "Far-infrared lasing due to intracenter optical transitions in Ge", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262781
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Germanium

Crystals

Luminescence

Resonators

Ionization

Magnetism

Electronics

Back to Top