Paper
18 December 1996 InP-based HEMTs for millimeter wave and submillimeter wave power applications
Mehran Matloubian
Author Affiliations +
Abstract
In recent years research in the development of InP-based HEMTs for millimeter wave and submillimeter wave power applications has increased dramatically. This has led to the development of InP-based power HEMTs with state-of-the-art performance. A review of the development of InP-based HEMTs for millimeter wave and submillimeter wave power applications is presented in this work.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mehran Matloubian "InP-based HEMTs for millimeter wave and submillimeter wave power applications", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262777
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KEYWORDS
Field effect transistors

Extremely high frequency

Gallium arsenide

Transistors

Microwave radiation

Aluminum

Indium

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