Bridgman growth and assessment of CdTe and Cd1-yZnyTe crystals

Yu Long Mo; Quanling Yue; Chaowang Liu; Hua Chen; Gang Wu

doi:10.1117/12.252117

25 September 1996 Bridgman growth and assessment of CdTe and Cd1-yZnyTe crystals

Yu Long Mo, Quanling Yue, Chaowang Liu, Hua Chen, Gang Wu

Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996) https://doi.org/10.1117/12.252117
Event: Photonics China '96, 1996, Beijing, China

Abstract

In order to meet with the epitaxial growth of large area Hg_1-xCd_xTe (MCT) with various compositions for infrared focal plane arrays, CdTe and Cd_1-yZn_yTe (y equals 0.020, 0.025 and 0.040 for various x) crystals with 120 mm length and 20 - 40 mm diameter have been successfully synthesized and grown by the vertical Bridgman method. These crystals were grown unseededly or seededly and free of any macroscopic defects e.g. micro-cave and crackles. Wafers with areas from 12 X 18 mm² to 30 X 35 mm² in the <111> orientation have been obtained from large grain of the ingot. Effects of changing the ampoule base shape upon the crystal growth have also been investigated. A necked ampoule bottom is preferred to ones employing seeding. Assessments of the samples have included infrared transmission (range 2.4 - 24 micrometers ), etch pit density, X-ray photography and three-crystal rocking curve measurement. Good quality MCT epitaxial films (areas of 12 X 18 mm² and 20 X 20 mm²), as demonstrated by good surface topography, electrical parameters, have been grown by liquid phase epitaxy and metal organic chemical vapor epitaxy onto CdTe(CT) and Cd_1-yZn_yTe(CZT) substrate materials produced in our study.

Citation Download Citation

Yu Long Mo, Quanling Yue, Chaowang Liu, Hua Chen, and Gang Wu "Bridgman growth and assessment of CdTe and Cd1-yZnyTe crystals", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252117

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