Coupling efficiency of metal gratings in a normal incident GaAs/AlGaAs quantum well infrared detector

Yu Jun Yang; Guanqun Xia; Shichang Zou; Xun Wang

doi:10.1117/12.252121

25 September 1996 Coupling efficiency of metal gratings in a normal incident GaAs/AlGaAs quantum well infrared detector

Yu Jun Yang, Guanqun Xia, Shichang Zou, Xun Wang

Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996) https://doi.org/10.1117/12.252121
Event: Photonics China '96, 1996, Beijing, China

Abstract

A numerical calculation of coupling efficiency of planar metal grating coupled GaAs/AlGaAs quantum well infrared detectors has been made in this work. The results showed that the coupling efficiency is a function of the ratio of the grating period (Lambda) to the intersubband resonance wavelength (lambda) for various degrees of metal filling. In the vicinity of n(Lambda) /(lambda) < 1 (n is the refractive index), filling factors round 0.5 - 0.7 give large longitudinal electric-field components, which induces a strong coupling to the intersubband absorption in the quantum well structures of the semiconductor. Numerical calculations provide detailed guidelines for obtaining optimum coupling for GaAs/AlGaAs quantum well infrared detectors.

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Yu Jun Yang, Guanqun Xia, Shichang Zou, and Xun Wang "Coupling efficiency of metal gratings in a normal incident GaAs/AlGaAs quantum well infrared detector", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252121

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KEYWORDS

Quantum wells

Infrared detectors

Metals

Quantum efficiency

Absorption

Refractive index

Semiconductors

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