Paper
15 April 1997 Improved performance III-V quantum well IR photodetectors: review of current and potential focal plane technology
Lewis T. Claiborne
Author Affiliations +
Abstract
The maturation of the III-V materials technology has provided an opportunity for the development of a producible and affordable class of IR detector arrays. Designs based on the GaAs compounds permit the realization of multiple quantum well IR photodetectors (QWIPs) which are useful for long wavelength focal plane arrays with sizes demonstrated up to 640 X 480. Similar designs using InP based materials can cover an even broader IR spectral region with lattice matched structures. QWIP demonstrations have been made for midwave detectors and very long wave detectors as well. New detector structures that improve optical performance and reduce bias current can lead to higher performance QWIPs which approach the performance of mercury cadmium telluride at moderate operating temperatures. These developments offer the possibility of practical, large, affordable IR focal plane arrays in the near future.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lewis T. Claiborne "Improved performance III-V quantum well IR photodetectors: review of current and potential focal plane technology", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271178
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Cited by 6 scholarly publications.
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KEYWORDS
Quantum well infrared photodetectors

Sensors

Gallium arsenide

Quantum efficiency

Quantum wells

Staring arrays

Long wavelength infrared

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