Monolithic active pixel InGaAs focal plane arrays for near-infrared imaging

Jiten Sarathy; George A. Gasparian; Michael J. Lange; Marshall J. Cohen; Gregory H. Olsen; Dong-Su Kim; Pavel Studenkov; Stephen R. Forrest

doi:10.1117/12.271193

15 April 1997 Monolithic active pixel InGaAs focal plane arrays for near-infrared imaging

Jiten Sarathy, George A. Gasparian, Michael J. Lange, Marshall J. Cohen, Gregory H. Olsen, Dong-Su Kim, Pavel Studenkov, Stephen R. Forrest

Author Affiliations +

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271193
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We present the preliminary results of our investigation into the demonstration of a 16 X 16 element 'active-pixel sensor' array for imaging in the 0.5-2.5 micrometers wavelength spectrum. Each pixel consists of an InGaAs photodiode integrated with InP JFET-based signal processing electronics. An InP-based reset switch in each pixel is addressable using peripheral row and column select switches. The pixel architecture is based on a source-follower circuit. Each pixel has only four devices - three JFETs and a photodetector. This architecture can potentially lead to pixel fill factors in excess of 60 percent. The InP-based JFETs have extremely low leakage currents and high ON/OFF switching ratios. Each photodiode is independently addressed by applying a voltage to the reset terminal. Once the reset transistor Qa is switched ON, the photocurrent drives the output terminal using the source-follower circuit. The Sorce Follower Array architecture facilitates monolithic integration of the InP JFETs and InGaAs photodetectors with up to 2.5micrometers -wavelength cut-off. One important aspect of the JFET design is the p-type InP epilayer under the channel region of the JFET. This grown in p-n junction isolates the channel from the substrate thereby reducing the leakage current of the JFET.

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Jiten Sarathy, George A. Gasparian, Michael J. Lange, Marshall J. Cohen, Gregory H. Olsen, Dong-Su Kim, Pavel Studenkov, and Stephen R. Forrest "Monolithic active pixel InGaAs focal plane arrays for near-infrared imaging", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271193

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KEYWORDS

Field effect transistors

Photodiodes

Sensors

Etching

Indium gallium arsenide

Imaging arrays

Staring arrays

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