Photodetectors of slit and sandwich types based on CdS and CdS1-xSex films obtained using MOCVD method from dithiocarbamates

Ludmila V. Zavyalova; Sergey V. Svechnikov; Vladimir G. Tchoni

doi:10.1117/12.271194

15 April 1997 Photodetectors of slit and sandwich types based on CdS and CdS_1-xSe_x films obtained using MOCVD method from dithiocarbamates

Ludmila V. Zavyalova, Sergey V. Svechnikov, Vladimir G. Tchoni

Author Affiliations +

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271194
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Here we report the results of working out an original, simple in control and not requiring expensive equipment MOCVD-method for depositing films of semiconductor compounds A₂B₆. Dithiocarbamates (DTC) are used as starting materials. The compounds are stable, easily synthesized, cheap and low toxic. Atoms of metal and sulfur in the DTC are strongly bonded. The DTC could be easily dissolved in various organic solvents. The experimental unit for film deposition comprises a spraying apparatus, a substrate heater, and a quartz cylinder for separation of a reaction zone from ambience. The process of film deposition is carried out in air conditions. Films of CdS, bright-yellow, transparent, having mirror smooth surface at thickness less than 2 mkm and rough surface at thickness 8-12 mkm, were deposited by spraying cadmium dithiocarbamate, that is DTC with radical C₂H₅, solution in pyridine on substrates heated to 240-280 degrees C. Deposition rate was 60-90 nm/min. Films obtained were of hexagonal modification, polycrystalline, textured, with low, at the level of centipercents content of oxygen and carbon. Slit type photodetectors based on CdS and CdS_1-xSe_x of 1.0 mkm thickness have dark conductivity (sigma) _d equals 10^-9 divided by 10^-8 Ohm^-1cm^-1 and photoconductivity (sigma) _ph equals 10^-2 divided by 10^-1 Ohm^-1cm^-1 at 200 lux. Industrially suitable technology for production of photopotentiometer on the base of these films was developed. Sandwich-type photodetectors In₂S₃ - CdS: Cu, Cl - In with 8-12 mkm thickness have the same value of photoconductivity and the light-to-dark ratio is 10⁶ divided by 10⁷. Based on sandwich-type photodetectors, a hybrid structure of pyroelectric-photodetector as a resonant-type coordinate-sensitive detector was developed.

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Ludmila V. Zavyalova, Sergey V. Svechnikov, and Vladimir G. Tchoni "Photodetectors of slit and sandwich types based on CdS and CdS_1-xSe_x films obtained using MOCVD method from dithiocarbamates", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271194

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