Theoretical performance of 3 to 4-um compressively strained InAlAsSb QW lasers

Aleksey D. Andreev; Georgy G. Zegrya

doi:10.1117/12.273807

2 May 1997 Theoretical performance of 3 to 4-um compressively strained InAlAsSb QW lasers

Aleksey D. Andreev, Georgy G. Zegrya

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273807
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Threshold characteristics of compressively strained InAlAsSb 3 - 4 micrometers MQW lasers have been studied theoretically. The Auger coefficient dependence on the QW composition has been calculated. It is shown that the internal absorption decreases with strain, which results in weaker temperature dependence of the threshold carrier concentration. It is demonstrated that the strain considerably improves threshold characteristics of InAlAsSb QW laser and increases its limiting operation temperature.

Citation Download Citation

Aleksey D. Andreev and Georgy G. Zegrya "Theoretical performance of 3 to 4-um compressively strained InAlAsSb QW lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273807

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