New intensity GaAs electro-optic modulator realized by intersecting waveguides

Beniamino Castagnolo; Maria Rizzi; Zhene Xu

doi:10.1117/12.271431

11 April 1997 New intensity GaAs electro-optic modulator realized by intersecting waveguides

Beniamino Castagnolo, Maria Rizzi, Zhene Xu

Proceedings Volume 3008, Miniaturized Systems with Micro-Optics and Micromechanics II; (1997) https://doi.org/10.1117/12.271431
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O⁺ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as anti-waveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. By the use of carrier induced refractive index modeling and the finite difference beam propagation method simulation, good performance and small injection current of this modulator are predicted.

Citation Download Citation

Beniamino Castagnolo, Maria Rizzi, and Zhene Xu "New intensity GaAs electro-optic modulator realized by intersecting waveguides", Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997); https://doi.org/10.1117/12.271431

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