Resolution and depth of focus in optical lithography

Chris A. Mack

doi:10.1117/12.280550

14 August 1997 Resolution and depth of focus in optical lithography

Chris A. Mack

Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280550
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

Common uses of the terms 'resolution' and 'depth of focus' (DOF) are explored as they relate to semiconductor lithography. A definition of DOF is given which is most appropriate to photolithography for IC manufacturing. Examples of the use of the definition for DOF for studying trends in lithography are given. Resolution is then defined based on realistic requirements for semiconductor manufacturing. Using this definition of resolution, the common scaling law of resolution with numerical aperture is shown to be inaccurate under typical conditions.

Citation Download Citation

Chris A. Mack "Resolution and depth of focus in optical lithography", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280550

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