Molecular Beam Epitaxial Growth Of Silicon Devices

F. G. Allen; S. S. Iyer; R. A. Metzger

doi:10.1117/12.934269

15 September 1982 Molecular Beam Epitaxial Growth Of Silicon Devices

F. G. Allen, S. S. Iyer, R. A. Metzger

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934269
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Silicon growth by Molecular Beam Epitaxy has great advantages for device fabrication. It can readily provide doping profiles with arbitrary and complex shapes, in any sequence, with abrupt transitions without smearing or compensation. Excellent depth and doping control results for layer thickness down to a few angstroms. Examples are shown of profiles that have already been grown for varactor diodes, avalanche and tunnel diodes, a low barrier Schottky diode and an n-p-n bipolar transistor.

Citation Download Citation

F. G. Allen, S. S. Iyer, and R. A. Metzger "Molecular Beam Epitaxial Growth Of Silicon Devices", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934269

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