Paper
7 July 1998 Three-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain properties
Y. Chan, Michael C. Y. Chan, E. Herbert Li
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Abstract
Multiple cations intermixed In0.53Ga0.47As/In0.52Al0.48As quantum well structure with 60 angstroms well width is investigated by using the expanded form of Fick's second law. It was found that a maximum compressive strain of 0.64% is obtained when annealing time reaches 3 hours at 812 degree(s)C in the indium sublattice. For a small interdiffusion, i.e. 1 to 1.5 hrs, the subband separation between the lowest heavy and light hole states is at its greatest. This is a major contribution to the band structure and averaged density of states, thus enhancement in optical gain up to 40% is obtained. For a large interdiffusion, i.e. up to 6 hrs, a large blue shift of the peak gain from 0.842 to 1.016 eV is observed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Chan, Michael C. Y. Chan, and E. Herbert Li "Three-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain properties", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316669
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KEYWORDS
Quantum wells

Diffusion

Gallium

Annealing

Aluminum

Indium

Indium gallium arsenide

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